Low-power random number generator
Abstract:
Embodiments are directed to an integrated circuit for a low-power random number generator that uses a thin-film transistor. Embodiments of the integrated circuit include one or more front-end devices formed on a substrate, and one or more interlayer dielectric (ILD) layers formed on the one or more front-end devices. Embodiments of the integrated circuit also include one or more back-end devices formed on the one or more ILD layers, wherein the one or more back-end devices are configured to amplify a noise signal and transmit an amplified noise signal to the one or more front-end devices for processing.
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