Invention Grant
- Patent Title: Method of improving a high current of GOA circuit when power on
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Application No.: US15741976Application Date: 2017-11-23
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Publication No.: US10672355B2Publication Date: 2020-06-02
- Inventor: Xiaowen Lv
- Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Applicant Address: CN Shenzhen
- Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shenzhen
- Agency: Hemisphere Law, PLLC
- Agent Zhigang Ma
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7bd6890f
- International Application: PCT/CN2017/112573 WO 20171123
- International Announcement: WO2019/095418 WO 20190523
- Main IPC: G09G3/36
- IPC: G09G3/36 ; G11C19/28 ; G09G3/20

Abstract:
A method of improving a high current of GOA circuit when power on is provided, including: determining a GOA circuit, wherein the GOA circuit includes a plurality of GOA structure units in cascade, each of GOA structure units includes a pull-up control circuit, a pull-up circuit, a transfer circuit, a pull-down circuit, a pull-down holding circuit and a bootstrapping capacitor, and a pre-charge signal, a first clock signal and a second clock signal are disposed on each of GOA structure units; and pulling up a voltage of the first clock signal and the second clock signal to a predetermined value for a certain time at an abnormal power off moment to discharge the pre-charge signal when detecting the GOA circuit abnormally power off. By practice of the disclosure, the pre-charge signal of GOA structure unit could discharge when the GOA circuit abnormally power off to reduce the high current probability.
Public/Granted literature
- US20190147819A1 METHOD OF IMPROVING A HIGH CURRENT OF GOA CIRCUIT WHEN POWER ON Public/Granted day:2019-05-16
Information query
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