Invention Grant
- Patent Title: Optical memory devices using a silicon wire grid polarizer and methods of making and using
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Application No.: US16461781Application Date: 2016-11-18
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Publication No.: US10672427B2Publication Date: 2020-06-02
- Inventor: Valery Konstantinovich Smirnov , Dmitry Stanislavovich Kibalov
- Applicant: Wostec, Inc.
- Applicant Address: US CA San Francisco
- Assignee: Wostec, Inc.
- Current Assignee: Wostec, Inc.
- Current Assignee Address: US CA San Francisco
- Agency: Lowe Graham Jones PLLC
- Agent Bruce E. Black
- International Application: PCT/RU2016/000796 WO 20161118
- International Announcement: WO2018/093284 WO 20180524
- Main IPC: G11B7/135
- IPC: G11B7/135 ; G11B7/0045 ; G02B5/30 ; G11B7/24035 ; G11B7/243

Abstract:
Long term optical memory includes a storage medium composed from an array of silicon nanoridges positioned onto the fused silica glass. The array has first and second polarization contrast corresponding to different phase of silicon. The first polarization contrast results from amorphous phase of silicon and the second polarization contrast results from crystalline phase of silicon. The first and second polarization states are spatially distributed over plurality of localized data areas of the storage medium.
Public/Granted literature
- US20190362755A1 OPTICAL MEMORY DEVICES USING A SILICON WIRE GRID POLARIZER AND METHODS OF MAKING AND USING Public/Granted day:2019-11-28
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