One or more write operations are performed on a memory component. A determination is made as to whether a number of the plurality of write operations performed on the memory component since performance of a refresh operation on the memory component exceeds a threshold value. In response to determining that the number of write operations performed on the memory component exceeds the threshold value, a memory cell of the memory component is identified based on the plurality of write operations. Data stored at memory cells of the memory component that are proximate to the identified memory cell is refreshed.