Invention Grant
- Patent Title: Memory system and method for bad block management
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Application No.: US16022451Application Date: 2018-06-28
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Publication No.: US10672497B2Publication Date: 2020-06-02
- Inventor: Yu Cai , Fan Zhang , Naveen Kumar , Aman Bhatia , Chenrong Xiong , Xuanxuan Lu
- Applicant: SK Hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: G11C29/38
- IPC: G11C29/38 ; G06F11/10 ; G06F11/14 ; G06F3/06

Abstract:
A method is provided for controlling a storage system, which can include a plurality of memory cells arranged in blocks and a memory controller coupled to the plurality of memory cells for controlling data write and read in the plurality of memory cells. The method includes identifying a block as a good block, if a count of bad pages in the block is zero, identifying the block as a degraded block if the count of bad pages is below a threshold number, and identifying the block as a bad block if the count of bad pages is above or equal to the threshold number. The method includes using good blocks and degraded blocks for read and program operations, and not using the bad blocks.
Public/Granted literature
- US20190304562A1 MEMORY SYSTEM AND METHOD FOR BAD BLOCK MANAGEMENT Public/Granted day:2019-10-03
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