Invention Grant
- Patent Title: Plasma processing apparatus and operation method thereof
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Application No.: US15982827Application Date: 2018-05-17
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Publication No.: US10672595B2Publication Date: 2020-06-02
- Inventor: Takeshi Ohmori , Daisuke Satou , Tatehito Usui , Satomi Inoue , Kenji Maeda
- Applicant: HITACHI HIGH-TECH CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge, P.C.
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.
Public/Granted literature
- US20180269042A1 PLASMA PROCESSING APPARATUS AND OPERATION METHOD THEREOF Public/Granted day:2018-09-20
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