Invention Grant
- Patent Title: Metal oxide-resistive memory using two-dimensional edge electrodes
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Application No.: US15710117Application Date: 2017-09-20
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Publication No.: US10672604B2Publication Date: 2020-06-02
- Inventor: Seunghyun Lee , Joon Sohn , Hon-Sum Philip Wong
- Applicant: The Board of Trustees of the Leland Stanford Junior University
- Applicant Address: US CA Stanford
- Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee Address: US CA Stanford
- Agency: Lumen Patent Firm
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/82 ; H01L27/11 ; H01L45/00 ; G11C13/00 ; B82Y40/00
Abstract:
Improved resistive random access memory (RRAM) devices are provided that use a 2-D electrode as the SET electrode to take up a variable amount of oxygen from an oxide material, thereby providing a non-volatile resistive memory cell.
Public/Granted literature
- US20180082840A1 Metal oxide-resistive memory using two-dimensional edge electrodes Public/Granted day:2018-03-22
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