Invention Grant
- Patent Title: Hybrid mask for deep etching
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Application No.: US16074190Application Date: 2017-01-26
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Publication No.: US10672620B2Publication Date: 2020-06-02
- Inventor: Mohamed Tarek Ghoneim
- Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Applicant Address: SA Thuwal
- Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: SA Thuwal
- Agency: Patent Portfolio Builders PLLC
- International Application: PCT/IB2017/050417 WO 20170126
- International Announcement: WO2017/134545 WO 20170810
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/027 ; H01L21/033 ; H01L21/768 ; H01L21/56 ; H01L23/00
Abstract:
Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.
Public/Granted literature
- US20190385861A1 HYBRID MASK FOR DEEP ETCHING Public/Granted day:2019-12-19
Information query
IPC分类:
