Invention Grant
- Patent Title: Pattern forming material, pattern forming method, and method for manufacturing semiconductor device
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Application No.: US16299548Application Date: 2019-03-12
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Publication No.: US10672621B2Publication Date: 2020-06-02
- Inventor: Norikatsu Sasao , Koji Asakawa , Tomoaki Sawabe , Shinobu Sugimura
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4e9f7e85
- Main IPC: H01L21/308
- IPC: H01L21/308 ; C08K3/16 ; C08K5/56 ; C08F220/18 ; C08F220/28 ; C08F212/08
Abstract:
The pattern forming material of an embodiment is a pattern forming material containing a polymer composed of two or more kinds of monomer units, in which a first monomer unit in the monomer units is provided with an ester skeleton having a first carbonyl group and one or more second carbonyl groups which bind to the ester skeleton, among the second carbonyl groups, the second carbonyl group that is farthest from a main chain of the polymer constituting the pattern forming material is present on a linear chain, and a second monomer unit in the monomer units is provided with a crosslinkable functional group on a side chain terminal.
Public/Granted literature
- US20200006076A1 PATTERN FORMING MATERIAL, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2020-01-02
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