There is provided a method of performing an analysis of a defect in a pattern of an imprint material on a substrate that has undergone an imprint process of transferring a pattern of a mold onto the substrate. The method includes obtaining a defect distribution of the pattern on the substrate, obtaining map information indicating an arrangement of the imprint material on the substrate, and determining a type of a defect based on a relationship between a position of the defect in the defect distribution and a position of a gap in the imprint material generated in a process of spreading the imprint material by the imprint process, wherein the position of the gap is predicted based on the map information.