Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16316697Application Date: 2017-06-27
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Publication No.: US10672687B2Publication Date: 2020-06-02
- Inventor: Yoshisumi Kawabata
- Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Applicant Address: JP Osaka
- Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Current Assignee Address: JP Osaka
- Agency: IPUSA, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@df7c5ab
- International Application: PCT/JP2017/023636 WO 20170627
- International Announcement: WO2018/012281 WO 20180118
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00 ; H01L23/48 ; H01L25/18 ; H01L25/07

Abstract:
A semiconductor device includes a die pad, and a first lead integrally connected to the die pad. A second lead and a third lead are arranged laterally away from the first lead. A semiconductor element including a first lateral surface and a second lateral surface adjacent to each other and a third lateral surface located opposite to the first lateral surface and adjacent to the second lateral surface, is mounted on the die pad. A plurality of first conductive members electrically connects the at least part of a main electrode pad to the end on the die pad side of the second lead. A second conductive member connects a control electrode pad to the end on the die pad side of the third lead.
Public/Granted literature
- US20190295931A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-09-26
Information query
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