Invention Grant
- Patent Title: Semiconductor device with polygonal inductive device
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Application No.: US15965618Application Date: 2018-04-27
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Publication No.: US10672704B2Publication Date: 2020-06-02
- Inventor: Wen-Sheng Chen , An-Hsun Lo , En-Hsiang Yeh , Tzu-Jin Yeh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L49/02

Abstract:
A semiconductor device includes: a polygonal inductive device disposed on a first layer on a substrate, the polygonal inductive device including a first line portion; a first conductive line disposed on a second layer on the substrate; a second conductive line disposed on a third layer on the substrate; and a first conductive via arranged to electrically couple the second conductive line to the first conductive line; wherein the first layer is different from the second layer and the third layer, the first conductive line is electrically connected to a reference voltage, and the first conductive line crosses the first line portion viewing from a top of the semiconductor device.
Public/Granted literature
- US20190164886A1 SEMICONDUCTOR DEVICE WITH POLYGONAL INDUCTIVE DEVICE Public/Granted day:2019-05-30
Information query
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