Invention Grant

Semiconductor die
Abstract:
A method of making a semiconductor device includes etching an insulation layer to form a plurality of openings over a first region of the substrate and a plurality of openings over a second region of the substrate. The method includes filling a first opening of the plurality of openings over the first region with a first P-metal. The method includes filling a second opening of the plurality of openings over the first region with a first N-metal. An area of the first N-metal substantially differs in size from an area of the first P-metal. The method includes filling a first opening of the plurality of openings over the second region with a second P-metal. The method includes filling a second opening of the plurality of openings over the second region with a second N-metal. An area of the second N-metal differs from an area of the second P-metal.
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