Invention Grant
- Patent Title: Semiconductor die
-
Application No.: US15365457Application Date: 2016-11-30
-
Publication No.: US10672760B2Publication Date: 2020-06-02
- Inventor: Harry-Hak-Lay Chuang , Ming Zhu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/49 ; H01L29/66 ; H01L21/8238 ; H01L27/02 ; H01L27/092 ; H01L21/28 ; H01L27/07 ; H01L49/02 ; H01L29/423

Abstract:
A method of making a semiconductor device includes etching an insulation layer to form a plurality of openings over a first region of the substrate and a plurality of openings over a second region of the substrate. The method includes filling a first opening of the plurality of openings over the first region with a first P-metal. The method includes filling a second opening of the plurality of openings over the first region with a first N-metal. An area of the first N-metal substantially differs in size from an area of the first P-metal. The method includes filling a first opening of the plurality of openings over the second region with a second P-metal. The method includes filling a second opening of the plurality of openings over the second region with a second N-metal. An area of the second N-metal differs from an area of the second P-metal.
Public/Granted literature
- US20170084608A1 SEMICONDUCTOR DIE Public/Granted day:2017-03-23
Information query
IPC分类: