Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
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Application No.: US16429086Application Date: 2019-06-03
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Publication No.: US10672762B2Publication Date: 2020-06-02
- Inventor: Akio Yamano , Aiko Takasaki , Hiroaki Ichikawa
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@29d89b9c
- Main IPC: H01L27/07
- IPC: H01L27/07 ; H01L23/522 ; H01L23/00 ; H01L29/66 ; H01L29/739 ; H01L29/861 ; H01L29/78 ; H01L21/3205 ; H01L29/417 ; H01L21/768 ; H01L27/06 ; H01L21/8234
Abstract:
A semiconductor device is provided to reduce thermal fatigue in a junction portion of an external wiring to enhance long-term reliability, where the semiconductor device includes a semiconductor substrate, a transistor portion and a diode portion that are alternately arranged along a first direction parallel to a front surface of the semiconductor substrate inside the semiconductor substrate, a surface electrode that is provided above the transistor portion and the diode portion and that is electrically connected to the transistor portion and the diode portion, an external wiring that is joined to the surface electrode and that has a contact width with the surface electrode in the first direction, the contact width being larger than at least one of a width of the transistor portion in the first direction and a width of the diode portion in the first direction.
Public/Granted literature
- US20190287964A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2019-09-19
Information query
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