Invention Grant
- Patent Title: Integrated circuit with multi-threshold bulk FinFETs
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Application No.: US15127175Application Date: 2015-03-17
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Publication No.: US10672768B2Publication Date: 2020-06-02
- Inventor: Brad D. Gaynor , Soha Hassoun
- Applicant: Tufts University
- Applicant Address: US MA Medford
- Assignee: Tufts University
- Current Assignee: Tufts University
- Current Assignee Address: US MA Medford
- Agency: Occhiuti & Rohlicek LLP
- International Application: PCT/US2015/020962 WO 20150317
- International Announcement: WO2015/142847 WO 20150924
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L21/8234 ; H01L29/06 ; H01L29/66

Abstract:
A method for manufacturing a FinFET having a fin that has a fin body includes selecting a desired electrical performance parameter, selecting a base dimension of the fin, identifying a combination of fin-body doping and fin-geometry that causes the FinFET to have the desired electrical performance parameter, doping the fin body according to the identified fin-body doping, and fabricating the fin according to the fin-geometry.
Public/Granted literature
- US20170179121A1 INTEGRATED CIRCUIT WITH MULTI-THRESHOLD BULK FINFETS Public/Granted day:2017-06-22
Information query
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