Invention Grant
- Patent Title: Method of manufacturing semiconductor device having multi-height structure
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Application No.: US16278208Application Date: 2019-02-18
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Publication No.: US10672777B2Publication Date: 2020-06-02
- Inventor: Kuan-Wei Su , Yung-Lung Hsu , Chih-Hsun Lin , Kun-Tsang Chuang , Chiang-Ming Chuang , Chia-Yi Tseng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L27/11521
- IPC: H01L27/11521 ; H01L29/49 ; H01L29/788 ; H01L23/31 ; H01L23/29 ; H01L27/11526 ; H01L29/423 ; H01L29/66 ; H01L27/11548
Abstract:
A method for manufacturing a semiconductor device having a multi-height structure is provided. The semiconductor device having a multi-height structure includes a silicon substrate. A first structure and a second structure are respectively formed on the silicon substrate and connected to each other. A limiting block is formed on the second structure and near an edge of the second structure beside the first structure. A bottom anti-reflection coating (BARC) layer is formed to blanketly cover the first structure, the second structure and the limiting block, in which the BARC layer includes a low-viscosity material, and the BARC layer overlying the top surface of the second structure has an external surface substantially parallel to the top surface of the second structure. Control gates are formed on the external surface of the BARC layer.
Public/Granted literature
- US20190181149A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING MULTI-HEIGHT STRUCTURE Public/Granted day:2019-06-13
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