Invention Grant
- Patent Title: Three-dimensional semiconductor device and method of manufacturing the same
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Application No.: US15460801Application Date: 2017-03-16
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Publication No.: US10672787B2Publication Date: 2020-06-02
- Inventor: Sung-Min Hwang , Sunghoi Hur
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7e906717
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11575 ; H01L27/1157 ; G11C16/04 ; G11C16/08 ; H01L23/528 ; H01L27/11565
Abstract:
An electrode structure includes a plurality of electrodes vertically stacked on a substrate. Each of the plurality of electrodes includes an electrode portion, a pad portion and a protrusion. The electrode portion is parallel to a top surface of the substrate, extending in a first direction. The pad portion extends from the electrode portion in an inclined direction with respect to the top surface of the substrate. The protrusion protrudes from a portion of the pad portion in a direction parallel to the inclined direction. Protrusions of the plurality of electrodes are arranged in a direction diagonal to the first direction when viewed from a plan view.
Public/Granted literature
- US20170309639A1 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-10-26
Information query
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