A method of manufacturing an active array substrate, comprising: providing a substrate; forming gate electrodes on the substrate; forming a gate insulating layer, a semiconductor layer and an Ohmic contact layer on the transparent substrate and the gate electrodes in order; forming source electrodes and drain electrodes on the Ohmic contact layer; forming a protection layer on the source electrodes and the drain electrodes; and forming a pixel electrode layer on the protection layer, wherein the pixel electrode layer is electrically connected to the drain electrode. The gate insulating layer comprises nanometer porous silicon and nanometer particles, and a dielectric constant of the nanometer particle is greater than a dielectric constant of the nanometer porous silicon.