Invention Grant
- Patent Title: Optical sensor having two taps for photon-generated electrons of visible and IR light
-
Application No.: US16532570Application Date: 2019-08-06
-
Publication No.: US10672808B2Publication Date: 2020-06-02
- Inventor: Daniel Gaebler
- Applicant: X-FAB Semiconductor Foundries GmbH
- Applicant Address: DE Erfurt
- Assignee: X-FAB Semiconductor Foundries GmbH
- Current Assignee: X-FAB Semiconductor Foundries GmbH
- Current Assignee Address: DE Erfurt
- Agency: Stevens & Showalter LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@30d9f54b com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@18a8ac2e
- Main IPC: H01L27/144
- IPC: H01L27/144 ; H01L27/146 ; H01L31/02 ; H01L31/0224 ; H01L31/103

Abstract:
An optical sensor in which photo currents generated by light in the visible and infrared wavelength ranges are to be tapped separately at pn junctions of active regions. The active regions include n- or p-doping and are formed in a p-substrate 52. The optical sensor comprises a surface-near first active region 12, and a second active region 14 subjacent to the first active region 12 and forming together with the first active region 12 a pn junction 22 that is short-circuited. A third active region 20 is subjacent to the second active region 14 and forming together with the second active region a further pn junction 23. Together with a fourth active region 24 subjacent to the second active region 20, a further pn junction 25, 29 is formed together with the third active region 20 and the substrate 52.
Public/Granted literature
- US20190363113A1 OPTICAL SENSOR HAVING TWO TAPS FOR PHOTON-GENERATED ELECTRONS OF VISIBLE AND IR LIGHT Public/Granted day:2019-11-28
Information query
IPC分类: