Invention Grant
- Patent Title: Thermal insulation for three-dimensional memory arrays
-
Application No.: US15855669Application Date: 2017-12-27
-
Publication No.: US10672835B2Publication Date: 2020-06-02
- Inventor: Paolo Fantini
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: H01L27/24
- IPC: H01L27/24 ; G11C13/00 ; H01L45/00 ; G11C7/04

Abstract:
Methods, systems, and devices for a three-dimensional memory array are described. Memory cells may transform when exposed to elevated temperatures, including elevated temperatures associated with a read or write operation of a neighboring cell, corrupting the data stored in them. To prevent this thermal disturb effect, memory cells may be separated from one another by thermally insulating regions that include one or several interfaces. The interfaces may be formed by layering different materials upon one another or adjusting the deposition parameters of a material during formation. The layers may be created with planar thin-film deposition techniques, for example.
Public/Granted literature
- US20180204880A1 THERMAL INSULATION FOR THREE-DIMENSIONAL MEMORY ARRAYS Public/Granted day:2018-07-19
Information query
IPC分类: