A metal-insulator-metal (MIM) capacitor is provided on a surface of an insulator layer that is located on a handle substrate. The MIM capacitor includes a first metal structure extending upwards from a first portion of the insulator layer, a second metal structure extending upwards from a second portion of the insulator layer, and an oxide fin located between the first and second metal structures, wherein the oxide fin directly contacts an entirety of a sidewall surface of the first metal structure and an entirety of a sidewall surface of the second metal structure, the oxide fin having a topmost surface that is coplanar with a topmost surface of both the first and second metal structures.