Invention Grant
- Patent Title: Metal-oxide-metal capacitor structure
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Application No.: US16373575Application Date: 2019-04-02
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Publication No.: US10672863B2Publication Date: 2020-06-02
- Inventor: Chun-Sheng Chen
- Applicant: Powerchip Technology Corporation
- Applicant Address: TW Hsinchu
- Assignee: Powerchip Semiconductor Manufacturing Corporation
- Current Assignee: Powerchip Semiconductor Manufacturing Corporation
- Current Assignee Address: TW Hsinchu
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2683ef95
- Main IPC: H01G4/005
- IPC: H01G4/005 ; H01L49/02

Abstract:
The present invention provides a metal-oxide-metal (MOM) capacitor including a first metal layer and a second metal layer. The first metal layer includes a plurality of first metal stripes and second metal stripes extending along a first direction and a plurality of first metal jogs and second metal jogs extending along a second direction. Each of the first metal jogs is connected to one of the first metal stripes and each of the second metal jogs is connected to one of the second metal stripes. The second metal layer includes a plurality of third metal stripes and fourth metal stripes extending along the first direction and includes a plurality of third metal jogs and fourth metal jogs. Each of the third metal jogs is connected to one of the third metal stripes and each of the fourth metal jogs is connected to one of the fourth metal stripes.
Public/Granted literature
- US20200135842A1 METAL-OXIDE-METAL CAPACITOR STRUCTURE Public/Granted day:2020-04-30
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