A method is presented for forming a semiconductor device. The method includes forming an oxygen containing interfacial layer on a semiconductor substrate, forming a hafnium oxide layer on the interfacial layer, the hafnium oxide layer crystallizing to a non-centrosymmetric phase in a final structure, forming a first electrode containing a scavenging metal, which reduces a thickness of the interfacial layer via an oxygen scavenging reaction in the final structure, on the hafnium oxide layer, and forming a second electrode on the first electrode.