Invention Grant
- Patent Title: Structure and method for high-k metal gate
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Application No.: US15722652Application Date: 2017-10-02
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Publication No.: US10672886B2Publication Date: 2020-06-02
- Inventor: Shahaji B. More , Cheng-Han Lee , Zheng-Yang Pan , Shih-Chieh Chang , Chun-Chieh Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/66 ; H01L29/51 ; H01L29/10 ; H01L29/78 ; H01L21/28 ; H01L21/8238
Abstract:
A method of forming a gate dielectric material includes forming a high-K dielectric material in a first region over a substrate, where forming the high-K dielectric material includes forming a first dielectric layer comprising hafnium over the substrate, and forming a second dielectric layer comprising lanthanum over the first dielectric layer.
Public/Granted literature
- US20190067457A1 STRUCTURE AND METHOD FOR HIGH-K METAL GATE Public/Granted day:2019-02-28
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