Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15988496Application Date: 2018-05-24
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Publication No.: US10672889B2Publication Date: 2020-06-02
- Inventor: Georgios Vellianitis
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L21/8238 ; H01L21/308 ; H01L21/8258 ; H01L27/092 ; H01L21/762
Abstract:
A method of manufacturing a semiconductor device includes forming an isolation region on a semiconductor substrate. A trench is formed in an crystallographic direction of the semiconductor substrate in the isolation region. An epitaxial layer is grown in the trench. The epitaxial layer is patterned to form a semiconductor fin orientated along an crystallographic direction of the semiconductor substrate, wherein ≠ .
Public/Granted literature
- US20190165140A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-05-30
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