Invention Grant
- Patent Title: Integrated circuit device
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Application No.: US16166801Application Date: 2018-10-22
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Publication No.: US10672890B2Publication Date: 2020-06-02
- Inventor: Min-seong Lee , Il-ryong Kim , Kyoung-hwan Yeo , Jae-yup Chung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7e74ec2c
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/088 ; H01L21/8234

Abstract:
An integrated circuit device includes a substrate including a first device region and a second device region; a first fin separation insulating portion on the first device region; a pair of first fin-type active regions spaced from each other with the first fin separation insulating portion therebetween in the first device region and collinearly extending in a first horizontal direction; a second fin separation insulating portion extending in a second horizontal direction over the first device region and the second device region; and a pair of second fin-type active regions spaced from each other with the second fin separation insulating portion therebetween and collinearly extending in the first horizontal direction, wherein the first fin separation insulating portion and the second fin separation insulating portion vertically overlap each other.
Public/Granted literature
- US20190312130A1 INTEGRATED CIRCUIT DEVICE Public/Granted day:2019-10-10
Information query
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