A semiconductor device includes a drain region for a transistor, a drain active area directly below the drain region, a drift area directly below an insolation structure, and an accumulation area directly below a gate structure of the transistor. The semiconductor device includes a first selectively doped implant region of a first concentration of a first conductivity type extending to a first depth. The first selectively doped implant region is located in the drift area, the drain active area, and the accumulation area. The semiconductor device includes a second selectively doped implant region of a second concentration of the first conductivity type and extending to a second depth less than the first depth. The second concentration is less than the first concentration. The second selectively doped implant region is located the drain active area, but not in the accumulation area. The second selectively doped implant region occupies a lateral portion of the drain active area that the first doped region does not occupy.