Invention Grant
- Patent Title: Strained gate semiconductor device having an interlayer dielectric doped with oxygen and a large species material
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Application No.: US16022686Application Date: 2018-06-28
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Publication No.: US10672909B2Publication Date: 2020-06-02
- Inventor: Cheng-Ta Wu , Chii-Ming Wu , Shiu-Ko Jangjian , Kun-Tzu Lin , Lan-Fang Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423 ; H01L21/02 ; H01L21/3115 ; H01L29/66 ; H01L21/8238 ; H01L21/28 ; H01L27/092 ; H01L29/40 ; H01L29/51 ; H01L29/49
Abstract:
A semiconductor device including a gate stack over a substrate. The semiconductor device further includes an interlayer dielectric (ILD) at least partially enclosing the gate stack. The ILD includes a first portion doped with an oxygen-containing material, a second portion doped with a large species material, and a third portion being undoped by the oxygen-containing material and the large species material.
Public/Granted literature
- US20180308979A1 STRAINED GATE SEMICONDUCTOR DEVICE WITH DOPED INTERLAYER DIELECTRIC MATERIAL Public/Granted day:2018-10-25
Information query
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