Invention Grant
- Patent Title: Threshold voltage adjustment from oxygen vacancy by scavenge metal filling at gate cut (CT)
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Application No.: US16059693Application Date: 2018-08-09
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Publication No.: US10672910B2Publication Date: 2020-06-02
- Inventor: Huimei Zhou , Ruqiang Bao , Michael P. Belyansky , Andrew M. Greene , Gen Tsutsui
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/78 ; H01L21/28 ; H01L29/49 ; H01L21/02 ; H01L29/06 ; H01L21/8238 ; H01L21/762
Abstract:
A method of controlling threshold voltage shift that includes forming a first set of channel semiconductor regions on a first portion of a substrate, and forming a second set of channel semiconductor regions on a second portion of the substrate. A gate structure is formed on the first set of channel semiconductor regions and the second set of channel, wherein the gate structure extends from a first portion of the substrate over an isolation region to a second portion of the substrate. A gate cut region is formed in the gate structure over the isolation region. An oxygen scavenging metal containing layer is formed on sidewalls of the gate cut region.
Public/Granted literature
- US20200052125A1 THRESHOLD VOLTAGE ADJUSTMENT FROM OXYGEN VACANCY BY SCAVENGE METAL FILLING AT GATE CUT (CT) Public/Granted day:2020-02-13
Information query
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