Invention Grant
- Patent Title: Wearable systems with fast-gated photodetector architectures having a single photon avalanche diode and capacitor
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Application No.: US16537360Application Date: 2019-08-09
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Publication No.: US10672936B2Publication Date: 2020-06-02
- Inventor: Bruno Do Valle , Rong Jin , Jacob Dahle , Husam Katnani
- Applicant: HI LLC
- Applicant Address: US CA Los Angeles
- Assignee: HI LLC
- Current Assignee: HI LLC
- Current Assignee Address: US CA Los Angeles
- Agency: ALG Intellectual Property, LLC
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H04N5/369 ; H01L31/0352 ; H01L31/0224 ; A61B5/04 ; G01S7/4863 ; A61B5/00
Abstract:
A wearable system for use by a user includes a photodetector configured to detect a photon of a light pulse after the photon reflects from a target internal to the user. The photodetector includes a single photon avalanche diode (SPAD) and a capacitor configured to be charged, while the SPAD is in a disarmed state, with a bias voltage by a voltage source, and supply, when the SPAD is put in an armed state, the bias voltage to an output node of the SPAD such that a voltage across the SPAD is greater than a breakdown voltage of the SPAD.
Public/Granted literature
- US20190363210A1 Wearable Systems with Fast-Gated Photodetector Architectures Public/Granted day:2019-11-28
Information query
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