Invention Grant
- Patent Title: Flip-chip light emitting diode chip and fabrication method
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Application No.: US16666661Application Date: 2019-10-29
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Publication No.: US10672953B2Publication Date: 2020-06-02
- Inventor: Weiping Xiong , Shu-fan Yang , Meijia Yang , Chun-Yi Wu , Chaoyu Wu , Duxiang Wang
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5e501411
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00 ; H01L33/44 ; H01L33/22 ; H01L33/40

Abstract:
A light-emitting diode (LED) includes an epitaxial laminated layer with an upper surface and an opposing lower surface, the LED including: a first-type semiconductor layer; an active layer; and a second-type semiconductor layer. A portion of the first-type semiconductor layer and the active layer are etched to expose a portion of the second-type semiconductor layer; a first electrode and a second electrode are disposed over the lower surface of the epitaxial laminated layer; the first electrode is disposed over a surface of the first-type semiconductor layer; the second electrode is disposed over a surface of the exposed second-type semiconductor layer; a transparent medium layer over the upper surface of the epitaxial laminated layer, having a refractive index n1> 1.6; a transparent bonding medium layer over one upper surface of the transparent medium layer, having a refractive index n2
Public/Granted literature
- US20200066940A1 Flip-chip Light Emitting Diode Chip and Fabrication Method Public/Granted day:2020-02-27
Information query
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