Invention Grant
- Patent Title: CMOS thermal-diffusivity temperature sensor based on polysilicon
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Application No.: US15237281Application Date: 2016-08-15
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Publication No.: US10672964B2Publication Date: 2020-06-02
- Inventor: Saman Saeedi , Frankie Y. Liu , Yue Zhang , Suwen Yang
- Applicant: Oracle International Corporation
- Applicant Address: US CA Redwood Shores
- Assignee: Oracle International Corporation
- Current Assignee: Oracle International Corporation
- Current Assignee Address: US CA Redwood Shores
- Agency: Park, Vaughan, Fleming & Dowler LLP
- Main IPC: G01K7/00
- IPC: G01K7/00 ; H01L35/12 ; H01L35/32 ; G01K7/02 ; G01K7/42

Abstract:
The disclosed embodiments relate to the design of a temperature sensor, which is integrated into a semiconductor chip. This temperature sensor comprises an electro-thermal filter (ETF) integrated onto the semiconductor chip, wherein the ETF comprises: a heater; a thermopile, and a heat-transmission medium that couples the heater to the thermopile, wherein the heat-transmission medium comprises a polysilicon layer sandwiched between silicon dioxide layers. It also comprises a measurement circuit that measures a transfer function through the ETF to determine a temperature reading for the temperature sensor.
Public/Granted literature
- US20180045579A1 CMOS THERMAL-DIFFUSIVITY TEMPERATURE SENSOR BASED ON POLYSILICON Public/Granted day:2018-02-15
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