Invention Grant
- Patent Title: Composition for forming Ce-doped PZT-based piezoelectric film
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Application No.: US15127981Application Date: 2015-03-20
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Publication No.: US10672973B2Publication Date: 2020-06-02
- Inventor: Toshihiro Doi , Hideaki Sakurai , Nobuyuki Soyama
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Agent James E. Armstrong, IV; Nicholas J. DiCeglie, Jr.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6ebfea76
- International Application: PCT/JP2015/058618 WO 20150320
- International Announcement: WO2015/146863 WO 20151001
- Main IPC: H01L41/187
- IPC: H01L41/187 ; H01L41/318 ; C01G25/00 ; C04B35/491 ; C04B35/622 ; C04B35/624 ; C04B35/626 ; C04B35/634 ; C04B35/638 ; C04B35/64 ; C09D5/24

Abstract:
A composition for forming a Ce-doped PZT-based piezoelectric film contains: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone. The PZT-based precursors are contained so that a metal atom ratio (Pb:Ce:Zr:Ti) in the composition satisfies (1.00 to 1.28):(0.005 to 0.05):(0.40 to 0.55):(0.60 to 0.45) and the total of Zr and Ti in a metal atom ratio is 1. A concentration of the PZT-based precursor in 100 mass % of the composition is from 17 mass % to 35 mass % in terms of an oxide concentration, a rate of diol in 100 mass % of the composition is from 16 mass % to 56 mass %, and a molar ratio of polyvinylpyrrolidone to 1 mole of the PZT-based precursor is 0.01 moles to 0.25 moles in terms of monomers.
Public/Granted literature
- US20170110648A1 COMPOSITION FOR FORMING Ce-DOPED PZT-BASED PIEZOELECTRIC FILM Public/Granted day:2017-04-20
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