Invention Grant
- Patent Title: Precessional spin current structure with high in-plane magnetization for MRAM
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Application No.: US15445260Application Date: 2017-02-28
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Publication No.: US10672976B2Publication Date: 2020-06-02
- Inventor: Mustafa Michael Pinarbasi , Bartlomiej Adam Kardasz
- Applicant: Spin Memory, Inc.
- Applicant Address: US CA Fremont
- Assignee: Spin Memory, Inc.
- Current Assignee: Spin Memory, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Arnold & Porter Kaye Scholer LLP
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L43/10 ; H01L43/12
Abstract:
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a precessional spin current (PSC) magnetic layer in conjunction with a perpendicular MTJ where the in-plane magnetization direction of the PSC magnetic layer is free to rotate. The precessional spin current magnetic layer is constructed with a material having a face centered cubic crystal structure, such as permalloy.
Public/Granted literature
- US20180248113A1 PRECESSIONAL SPIN CURRENT STRUCTURE FOR MRAM Public/Granted day:2018-08-30
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