Invention Grant
- Patent Title: Light emitting diode chip and fabrication method
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Application No.: US16409740Application Date: 2019-05-10
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Publication No.: US10673003B2Publication Date: 2020-06-02
- Inventor: Shu-fan Yang , Chun-Yi Wu , Chaoyu Wu , Duxiang Wang
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7b985bdf
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L27/15 ; H01L51/44 ; H01L31/0468 ; H01L33/38 ; H01L33/42 ; H01L33/14

Abstract:
A light-emitting diode chip includes a light-emitting epitaxial laminated layer including a first-type semiconductor layer, a second-type semiconductor layer, and an active layer therebetween, wherein the light-emitting epitaxial laminated layer has a first surface and an opposing second surface, and wherein the second surface is a light-emitting surface; a first electrical connection layer over the first surface of the light-emitting epitaxial laminated layer and having first geometric pattern arrays; a second electrical connection layer over the second surface of the light-emitting epitaxial laminated layer and having second geometric pattern arrays; and a transparent current spreading layer over a surface of the second electrical connection layer; wherein, when external power is connected, a horizontal resistance of a current passing through the transparent current spreading layer is less than a current passing through the second electrical connection layer.
Public/Granted literature
- US20190267561A1 Light Emitting Diode Chip and Fabrication Method Public/Granted day:2019-08-29
Information query
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