Invention Grant
- Patent Title: Light-emitting semiconductor device, light-emitting semiconductor component and method for producing a light-emitting semiconductor device
-
Application No.: US15579162Application Date: 2016-06-02
-
Publication No.: US10673207B2Publication Date: 2020-06-02
- Inventor: Armin Dadgar , André Strittmatter , Christoph Berger
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee Address: DE Regensburg
- Agency: MH2 Technology Law Group, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6681cfce
- International Application: PCT/EP2016/062523 WO 20160602
- International Announcement: WO2016/193385 WO 20161208
- Main IPC: H01S5/183
- IPC: H01S5/183 ; H01S5/30 ; H01L33/00 ; H01L33/10 ; H01L33/32 ; H01L33/02 ; H01L33/30 ; H01S5/343 ; H01S5/00 ; H01L33/08 ; H01L33/50 ; H01S5/042

Abstract:
The invention relates to, inter alia, a light-emitting semiconductor component comprising the following: —a first mirror (102, 202, 302, 402, 502), —a first conductive layer (103, 203, 303, 403, 503), —a light-emitting layer sequence (104, 204, 304, 404, 504) on a first conductive layer face facing away from the first mirror, and—a second conductive layer (105, 205, 305, 405, 505) on a light-emitting layer sequence face facing away from the first conductive layer, wherein—the first mirror, the first conductive layer, the light-emitting layer sequence, and the second conductive layer are based on a III-nitride compound semiconductor material, —the first mirror is electrically conductive, and—the first mirror is a periodic sequence of homoepitaxial materials with varying refractive indices.
Public/Granted literature
Information query