Invention Grant
- Patent Title: Wideband power amplifiers with harmonic traps
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Application No.: US15832381Application Date: 2017-12-05
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Publication No.: US10673386B2Publication Date: 2020-06-02
- Inventor: Roy McLaren , Ramanujam Srinidhi Embar
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03F3/195 ; H03F1/48 ; H03F1/56 ; H03F3/213 ; H03F3/60 ; H03F3/24 ; H01L23/66 ; H01L23/498 ; H01L49/02 ; H01L29/20

Abstract:
An amplifier may include a transistor and input and output matching networks. One or more harmonic trap circuits may be electrically connected to a node located between the input matching network and a gate terminal of the transistor or to a node located between the output matching network and a drain terminal of the transistor. Each harmonic trap may provide a low resistance path to ground for signal energy above a fundamental operating frequency of the amplifier, such as harmonic frequencies thereof. The output matching network may act as an impedance inverter that provides a 90 degree insertion phase between the input of the output matching network and the load. A variable length drain feeder may connect a voltage source to an output of the output matching network.
Public/Granted literature
- US20190173435A1 WIDEBAND POWER AMPLIFIERS WITH HARMONIC TRAPS Public/Granted day:2019-06-06
Information query
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