Invention Grant
- Patent Title: Power amplifier
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Application No.: US16041346Application Date: 2018-07-20
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Publication No.: US10673394B2Publication Date: 2020-06-02
- Inventor: Jun-De Jin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H03F1/56
- IPC: H03F1/56 ; H03F3/193 ; H03F3/24

Abstract:
A power amplifier (PA) cell is coupled to an input signal source an a load, and includes a transistor coupled to the load; a first inductor coupled to a gate of the transistor; and a second inductor coupled to a source of the transistor, wherein the first inductor and the second inductor each includes a first conductive coil and a second conductive coil, respectively, having first and second inductance values, respectively, such that the power cell is coupled to the input signal source without an input impedance matching circuit disposed between the gate of the transistor and the input signal source, and without an output impedance matching circuit disposed between a drain of the transistor and the load.
Public/Granted literature
- US20180331663A1 POWER AMPLIFIER Public/Granted day:2018-11-15
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