Invention Grant
- Patent Title: Optimized multi gain LNA enabling low current and high linearity including highly linear active bypass
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Application No.: US16046962Application Date: 2018-07-26
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Publication No.: US10673401B2Publication Date: 2020-06-02
- Inventor: Emre Ayranci , Miles Sanner
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus LLP
- Agent Bruce W. Greenhaus, Esq.
- Main IPC: H03G3/30
- IPC: H03G3/30 ; H03F3/193 ; H03F1/32 ; H03F1/22 ; H03F3/72 ; H03G1/00 ; H03G3/00 ; H03F3/21
Abstract:
An LNA having a plurality of paths, each of which can be controlled independently to achieve a gain mode. Each path includes at least an input FET and an output FET coupled in series. A gate of the output FET is controlled to set the gain of the LNA. Signals to be amplified are applied to the gate of the input FET. Additional stacked FETs are provided in series between the input FET and the output FET.
Public/Granted literature
- US20190020322A1 Optimized Multi Gain LNA Enabling Low Current and High Linearity Including Highly Linear Active Bypass Public/Granted day:2019-01-17
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