Invention Grant
- Patent Title: Level shifter circuit
-
Application No.: US15980236Application Date: 2018-05-15
-
Publication No.: US10673418B2Publication Date: 2020-06-02
- Inventor: Seokkyun Ko
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2c7789e7
- Main IPC: H03K3/017
- IPC: H03K3/017 ; H03K3/356 ; H03K19/0185

Abstract:
A level shifter circuit is provided. The level shifter circuit includes a first voltage-based input circuit configured to generate a first voltage-based inverted voltage and a first voltage-based non-inverted voltage based on an input voltage having a first voltage as a first peak voltage; a pull-up circuit configured to generate a second voltage-based first current corresponding to the first voltage-based non-inverted voltage, generate a second voltage-based pull-up current based on the second voltage-based first current, and pull up an output voltage according to the second voltage-based pull-up current when the first voltage-based non-inverted voltage increases; and a pull-down circuit configured to generate a second voltage-based second current corresponding to the first voltage-based inverted voltage, generate a second voltage-based pull-down current based on the second voltage-based second current, and pull down the output voltage according to the second voltage-based pull-down current when the first voltage-based inverted voltage increases.
Public/Granted literature
- US20190173455A1 LEVEL SHIFTER CIRCUIT Public/Granted day:2019-06-06
Information query
IPC分类: