- Patent Title: Semiconductor element manufacturing method and manufacturing device
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Application No.: US15570570Application Date: 2016-06-20
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Publication No.: US10675715B2Publication Date: 2020-06-09
- Inventor: Kenji Hirano , Katsumi Ono
- Applicant: MITSUBISHI ELECTRIC CORPORATION
- Applicant Address: JP Chiyoda-Ku, Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Chiyoda-Ku, Tokyo
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@65503aab
- International Application: PCT/JP2016/068201 WO 20160620
- International Announcement: WO2016/208522 WO 20161229
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B23K26/38 ; B23K26/073 ; B23K26/359 ; H01L21/683 ; B23K26/06 ; H01L21/268 ; H01L21/78 ; B23K101/40
Abstract:
A semiconductor element manufacturing method according to the invention is such that a focal spot form of a laser light is an ellipse, and irradiation with the laser light is concentrated on a projected division line of an interface between a semiconductor substrate and a fixing sheet, which is a vaporizing pressure confining sheet, and vaporizing pressure generated by the irradiation is confined between the semiconductor substrate and the fixing sheet, and caused to act as a bending force on the semiconductor substrate, and an initial crack is extended. Because of this, energy of the laser light can be reduced, heat damage to an element region of the semiconductor substrate and debris can be reduced, and a division face with good flatness can be stably obtained.
Public/Granted literature
- US20180126493A1 SEMICONDUCTOR ELEMENT MANUFACTURING METHOD AND MANUFACTURING DEVICE Public/Granted day:2018-05-10
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