Invention Grant
- Patent Title: Gas jetting apparatus for film formation apparatus
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Application No.: US15514367Application Date: 2014-10-29
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Publication No.: US10676825B2Publication Date: 2020-06-09
- Inventor: Yoichiro Tabata , Kensuke Watanabe , Shinichi Nishimura
- Applicant: Toshiba Mitsubishi-Electric Industrial Systems Corporation
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
- Current Assignee: TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Xsensus LLP
- International Application: PCT/JP2014/078722 WO 20141029
- International Announcement: WO2016/067379 WO 20160506
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/503 ; H01L21/31 ; H05H1/24 ; B01J4/00 ; C23C16/04 ; C23C16/452 ; C23C16/513

Abstract:
The gas jetting apparatus according to the present invention includes a gas jetting cell unit for rectifying a gas and jetting the rectified gas into the film formation apparatus. The gas jetting cell unit has a fan shape internally formed with a gap serving as a gas route. A gas in a gas dispersion supply unit enters from a wider-width side of the fan shape into the gap, and, due to the fan shape, the gas is rectified, accelerated, and output from a narrower-width side of the fan shape into the film formation apparatus.
Public/Granted literature
- US20170275758A1 GAS JETTING APPARATUS FOR FILM FORMATION APPARATUS Public/Granted day:2017-09-28
Information query
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