Invention Grant
- Patent Title: Electromigration monitor
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Application No.: US15805406Application Date: 2017-11-07
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Publication No.: US10677833B2Publication Date: 2020-06-09
- Inventor: Fen Chen , Mukta G. Farooq , John A. Griesemer , Chandrasekaran Kothandaraman , John M. Safran , Timothy D. Sullivan , Ping-Chuan Wang , Lijuan Zhang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: ZIP Group PLLC
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G01R31/08 ; H01L23/48 ; G01R31/28

Abstract:
A structure, such as a wafer, semiconductor chip, integrated circuit, or the like, includes a through silicon via (TSV) and an electromigration (EM) monitor. The TSV) includes at least one perimeter sidewall. The EM monitor includes a first EM wire separated from the perimeter sidewall of the TSV by a dielectric.
Public/Granted literature
- US20180074111A1 ELECTROMIGRATION MONITOR Public/Granted day:2018-03-15
Information query
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