Invention Grant
- Patent Title: Quantum device comprising FET transistors and qubits co-integrated on the same substrate
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Application No.: US16284103Application Date: 2019-02-25
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Publication No.: US10679139B2Publication Date: 2020-06-09
- Inventor: Louis Hutin , Xavier Jehl , Maud Vinet
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@524713c3
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/08 ; H01L39/00 ; G06N10/00 ; H01L21/762 ; H01L29/66 ; H01L29/76 ; H01L27/088 ; H01L21/8234
Abstract:
Quantum device comprising: a quantum component forming a qubit, formed in an active layer of a substrate and comprising: a confinement region; charge carrier reservoirs; a first front gate covering the confinement region; first lateral spacers arranged around the first gate and covering access regions; an FET transistor formed in the active layer, comprising channel, source and drain regions formed in the active layer, a second front gate covering the channel region, and second lateral spacers arranged around the second front gate and covering source and drain extension regions; and wherein a width of the first lateral spacers is greater than that of the second lateral spacers.
Public/Granted literature
- US20190266509A1 QUANTUM DEVICE COMPRISING FET TRANSISTORS AND QUBITS CO-INTEGRATED ON THE SAME SUBSTRATE Public/Granted day:2019-08-29
Information query
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