Invention Grant
- Patent Title: Timing circuit for command path in a memory device
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Application No.: US16825096Application Date: 2020-03-20
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Publication No.: US10679683B1Publication Date: 2020-06-09
- Inventor: Liang Chen , Ming-Bo Liu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G11C7/04
- IPC: G11C7/04 ; G11C7/22 ; G06F13/18 ; H04L25/03 ; G11C7/10 ; G11C11/4096 ; G11C11/4074 ; G11C8/10 ; G11C8/18 ; G11C11/4093 ; G11C11/4076

Abstract:
An apparatus, such as a memory device, that includes circuits and techniques to synchronize various internal signals with an internal clock signal to ensure proper functionality of the memory device. A walk back circuit is provided to mimic propagation delays of an internal command signal, such as a write command signal, and to speed up the delayed internal command signal an amount equivalent to the propagation delays. The walk back circuit includes a mixture of delay elements provided to mimic propagation delays caused by both gate delays and routing delays.
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