Invention Grant
- Patent Title: ROM cell with transistor body bias control circuit
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Application No.: US16399939Application Date: 2019-04-30
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Publication No.: US10679714B2Publication Date: 2020-06-09
- Inventor: Jainendra Singh , Jwalant Kumar Mishra , Patrick Van de Steeg
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Main IPC: G11C8/08
- IPC: G11C8/08 ; G11C17/08 ; G11C11/412 ; G11C11/417

Abstract:
A read-only memory (ROM) includes ROM cells and a bias control circuit for biasing the ROM cells. Each ROM cell includes a set of transistors. The bias control circuit is connected to body terminals of the transistors of each ROM cell to provide a bias voltage. The bias voltage, which is temperature-dependent, is generated based on junction leakages at the body terminals of the transistors. The bias control circuit controls threshold voltages of the transistors using the bias voltage. The use of a temperature-dependent bias voltage to bias the body terminals of the transistors allows for a relatively constant read margin for each ROM cell.
Public/Granted literature
- US20200082894A1 ROM CELL WITH TRANSISTOR BODY BIAS CONTROL CIRCUIT Public/Granted day:2020-03-12
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