Invention Grant
- Patent Title: Cylindrical sputtering target
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Application No.: US15075119Application Date: 2016-03-19
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Publication No.: US10679833B2Publication Date: 2020-06-09
- Inventor: Yoshitaka Tsuruta
- Applicant: JX NIPPON MINING & METALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JX NIPPON MINING & METALS CORPORATION
- Current Assignee: JX NIPPON MINING & METALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Hauptman Ham, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@525fff13
- Main IPC: C23C14/34
- IPC: C23C14/34 ; H01J37/34

Abstract:
A cylindrical sputtering target includes a cylindrical substrate and a cylindrical sputtering target member joined together with a joining material. Where the joining material has a thickness of d (μm), the joining material has a coefficient of thermal expansion of α1 (μm/μmK), and a melting point of the joining material and room temperature have a difference of ΔT (K), a surface of the cylindrical sputtering target member on the side of the joining material has a value of ten-point average roughness (Rz) fulfilling: d (μm)×α1 (μm/μmK)×ΔT (K)≤Rz (μm).
Public/Granted literature
- US20160284524A1 CYLINDRICAL SPUTTERING TARGET Public/Granted day:2016-09-29
Information query
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