Invention Grant
- Patent Title: Manufacturing method of a semiconductor device
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Application No.: US15921391Application Date: 2018-03-14
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Publication No.: US10679861B2Publication Date: 2020-06-09
- Inventor: Kota Yasunishi
- Applicant: TOYODA GOSEI CO., LTD.
- Applicant Address: JP Kiyosu-Shi, Aichi-Ken
- Assignee: TOYODA GOSEI CO., LTD.
- Current Assignee: TOYODA GOSEI CO., LTD.
- Current Assignee Address: JP Kiyosu-Shi, Aichi-Ken
- Agency: McGinn I.P. Law Group, PLLC.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@46e80b46
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L29/45 ; H01L29/66 ; H01L21/3213 ; H01L29/872 ; H01L21/02 ; H01L29/20
Abstract:
A manufacturing method of a semiconductor device comprises forming an ohmic electrode on a surface of a semiconductor substrate, the ohmic electrode including an aluminum layer in a side opposite to a side in contact with the semiconductor substrate, performing a heat treatment on the ohmic electrode, performing an acid treatment on a surface of the aluminum layer in the ohmic electrode that has been subjected to the heat treatment and forming a wiring electrode in the side of the aluminum layer opposite to the side where the semiconductor substrate is provided after the acid treatment.
Public/Granted literature
- US20180277375A1 MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE Public/Granted day:2018-09-27
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