Invention Grant
- Patent Title: Method for manufacturing semiconductor structure
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Application No.: US15477869Application Date: 2017-04-03
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Publication No.: US10679889B2Publication Date: 2020-06-09
- Inventor: Yu-Hsiang Tsai , Chung-Chuan Tseng , Chia-Wei Liu , Li-Hsin Chu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/324 ; H01L21/78 ; H01L21/84 ; H01L29/06
Abstract:
A method for manufacturing a semiconductor structure includes at least following steps. A device layer is formed on a first semiconductor substrate. The device layer is separated from the first semiconductor substrate. A dielectric layer is formed on a second semiconductor substrate. The device layer is bonded onto the dielectric layer.
Public/Granted literature
- US20170207113A1 METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE Public/Granted day:2017-07-20
Information query
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