Invention Grant
- Patent Title: Device wafer processing method
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Application No.: US15819012Application Date: 2017-11-21
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Publication No.: US10679897B2Publication Date: 2020-06-09
- Inventor: Koichi Shigematsu , Satoshi Kumazawa
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: DISCO CORPORATION
- Current Assignee: DISCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain, Ltd.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6845f595
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/02 ; H01L21/3065 ; H01L21/66 ; H01L21/67 ; H01L21/308 ; H01L21/683 ; H01L21/68 ; H01L23/544 ; H01L21/306
Abstract:
Disclosed herein is a device wafer processing method including a protective film forming step of applying a water-soluble protective film material to the front side of a device wafer having devices separated by division lines and next exposing the division lines to form a protective film for protecting each device, an application time recording step of recording the time at which the water-soluble protective film material is applied to the device wafer, a determining step of determining whether or not a predetermined duration has elapsed from the time recorded in the application time recording step, an etching step of dry-etching the device wafer along the division lines after performing the determining step, and a protective film removing step of supplying a cleaning water to the protective film to thereby remove the protective film after performing the etching step. Only when it is determined in the determining step that the predetermined duration has not elapsed, the etching step is performed.
Public/Granted literature
- US20180144983A1 DEVICE WAFER PROCESSING METHOD Public/Granted day:2018-05-24
Information query
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